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Mouser electronics uses cookies and similar technologies to help deliver the best experience on our site. Aa absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 2. Spa11n60c3 transistor datasheet, spa11n60c3 equivalent, pdf data sheets. Oct 19, 2015 11n60c3 datasheet pdf cool mos power transistor, 11n60c3 datasheet, 11n60c3 pdf, 11n60c3 pinout, substitute, equivalent, data, circuit, output, parts. Spp11n60c3 spi11n60c3, spa11n60c3 cool mos power transistor. May 19, 2016 15n60c3 datasheet 650v, mos power transistor infineon, spp15n60c3 datasheet, 15n60c3 pdf, 15n60c3 pinout, 15n60c3 manual, 15n60c3 schematic. Ixys reserves the right to change limits, test conditions, and dimensions. Our cookies are necessary for the operation of the website, monitoring site performance and to deliver relevant content. Cssh2728ft30l0 30 mohms 1% 4w chip resistor wide 2827 7067 metric, 2728 automotive aecq200, current sense metal element from stackpole electronics inc. Spp11n65c3,spa11n65c3 spi11n65c3 cool mos power transistor v. Mosvi 2sk4111 switching regulator applications low drainsource on resistance.

Triacs bt9 series thermal resistances symbol parameter conditions min. Id 11 a feature new revolutionary high voltage technology ultra low gate charge periodic avalanche rated extreme dvdt rated high peak current capability improved transconductance pgto262 pgto220fp pgto220 marking 11n65c3 11n65c3. Fmr11n90e fuji power mosfet super fape3 series nchannel silicon power mosfet features outline drawings mm equivalent circuit schematic maintains both low power loss and low noise to3pf lower r on characteristic ds more controllable switching dvdt by gate resistance draind smaller v ringing waveform during switching gs. Spp11n60c3 mosfet nch 650v 11a to220ab infineon technologies datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Insulated gate bipolar transistor with antiparallel diode nchannel enhancementmode. Npn switching transistor, 2n2369 datasheet, 2n2369 circuit, 2n2369 data sheet. Fcp11n60fcpf11n60 tm fcp11n60fcpf11n60 general description superfettm is a new generation of high voltage mosfets from fairchild with outstanding low onresistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. These nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. Cssh2728ft30l0 stackpole electronics inc resistors digikey. Spp11n65c3,spa11n65c3 spi11n65c3 cool mos power transistor v ds 650 v rdson 0. Insulatedgate fieldeffect transistors mosfet workforce.

Id 11 a feature new revolutionary high voltage technology ultra low gate charge periodic avalanche rated extreme dvdt rated high peak current capability improved transconductance. Piv volts 65 90 90 45 25 30 100 100 75 40 25 40 30. Transistor 2n60c wholesale, transistor suppliers alibaba. Compare pricing for on semiconductor 2n5551bu across 15 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart.

A5 gne mosfet hall sensor 44e 402 triac bcr 10km feb3t 2n8491 smd transistor marking 352a ftg 1087 s sharp eia 577 sharp color tv. Ssp2n60bsss2n60b ssp2n60bsss2n60b 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. A wide variety of transistor 2n60c options are available to you, such as triode transistor, fieldeffect transistor, and tetrode transistor. Toshiba field effect transistor silicon n channel mos type. Germanium glass diode 1n601n60p taitron components. This advanced technology has been tailored to minimize. K absolute maximum ratings tc 25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 12 a drain current continuous id 12 a pulsed note 2 idm 48 a avalanche energy. Philips, alldatasheet, datasheet, datasheet search site for electronic components and. Id 11 a feature new revolutionary high voltage technology ultra low gate charge. The insulatedgate fieldeffect transistor igfet, also known as the metal oxide field effect transistor mosfet, is a derivative of the field effect. Spa11n60c3 datasheet, spa11n60c3 pdf, spa11n60c3 data sheet, spa11n60c3 manual, spa11n60c3 pdf, spa11n60c3, datenblatt, electronics spa11n60c3, alldatasheet, free.

Spp11n60c3 11n60c3 to220 transistor from infineon ebay. About 23% of these are transistors, 18% are integrated circuits, and 1% are other electronic components. Wes components reserves the right to supply a substitution transistor where the. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical. Ixys mosfets and igbts are covered by one or more of the following u. Pricing and availability on millions of electronic components from digikey electronics.